symbol v dss i d i dm v gs p d t j ,t stg t l parameter drain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage total power dissipation @ t c = 25 c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. static electrical characteristics characteristic / test conditions / part number drain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain current 2 (v ds > i d (on) x r ds (on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d [cont.]) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) thermal characteristics symbol r q jc r q ja characteristic junction to case junction to ambient min typ max 0.34 40 unit c/w symbol bv dss i d (on) r ds (on) i dss i gss v gs (th) min typ max APT5020BN 500 apt5022bn 500 APT5020BN 28 apt5022bn 27 APT5020BN 0.20 apt5022bn 0.22 250 1000 100 24 unit volts amps ohms m a na volts unit volts amps volts watts w/ c c apt apt 5020bn 5022bn 500 500 28 27 112 108 30 360 2.9 -55 to 150 300 maximum ratings all ratings: t c = 25 c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. APT5020BN 500v 28.0a 0.20 w apt5022bn 500v 27.0a 0.22 w n - channel enhancement mode high voltage power mosfets power mos iv 050-5008 rev c to-247 usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s
10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration min typ max 360 360 APT5020BN 112 apt5022bn 108 min typ max APT5020BN 28 apt5022bn 27 APT5020BN 112 apt5022bn 108 1.3 215 430 860 3714 dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 1.8 w min typ max 2890 3500 590 830 230 350 140 210 18 27 75 110 19 38 43 86 85 125 56 112 unit pf nc ns apt5020/5022bn characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions / part number continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) reverse recovery time (i s = -i d [cont.], dl s /dt = 100a/ m s) reverse recovery charge (i s = -i d [cont.], dl s /dt = 100a/ m s) source-drain diode ratings and characteristics symbol i s i sm v sd t rr q rr unit amps volts ns m c test conditions / part number v ds = 0.4 v dss , i ds = p d / 0.4 v dss , t = 1 sec. i ds = i d [cont.], v ds = p d / i d [cont.], t = 1 sec. symbol soa1 soa2 i lm characteristic safe operating area safe operating area inductive current clamped unit watts amps safe operating area characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. see transient thermal impedance curve. (fig.1) 2 pulse test: pulse width < 380 m s, duty cycle < 2% 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein. 0.5 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 050-5008 rev c z q jc , thermal impedance ( c/w)
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss (on), drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 50 100 150 200 250 0 1 2 3 4 5 0 2 4 6 8 10 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt5020/5022bn i d = 0.5 i d [cont.] v gs = 10v v gs =10v 5.5v 6.5v 5v 6v 4.5v 6v 5.5v 5v 20 16 12 8 4 0 40 32 24 16 8 0 28 24 20 16 12 8 4 0 2.5 2.0 1.5 1.0 0.5 0.0 20 16 12 8 4 0 2.50 2.00 1.50 1.00 0.50 1.2 1.1 1.0 0.9 0.8 0.7 1.4 1.2 1.0 0.8 0.6 0.4 t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c v ds > i d (on) x r ds (on)max. 250 m sec. pulse test @ <0.5 % duty cycle t j = 25 c 250 m sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 0.5 i d [cont.] 4.5v 7v 8v v gs =6.5, 7, 8, &10v t j = +25 c v gs =10v v gs =20v APT5020BN apt5022bn 050-5008 rev c
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 500 1000 0 10 20 30 40 50 0 40 80 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0 apt5020/5022bn v ds =100v v ds =250v to-247ad package outline t c =+25 c t j =+150 c single pulse t j =+150 ct j =+25 c 200 100 10 1 .1 20 16 12 8 4 0 10,000 5,000 1,000 500 100 200 100 50 20 10 5 2 1 c oss c rss c iss v ds =400v 10 m s 100 m s 1ms 10ms 100ms dc operation here limited by r ds (on) APT5020BN apt5022bn APT5020BN apt5022bn i d = i d [cont.] 050-5008 rev c 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.140) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate dimensions in millimeters and (inches) drain 2-plcs.
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